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75NF75
HEXFET
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Power MOSFET
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Dynamic dv/dt Rating 175°C Operating Temperature Fast switching Ease of Paralleling Simple Drive Requirements
VDSS = 75V ID25 = 75A RDS(ON) = 13.0 mΩ
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
75NF75 Datasheet
