75NF75 - POWER MOSFET

Description

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Estek Electronics

📥 Download Datasheet

Datasheet Details

Part number	75NF75
Manufacturer	Estek Electronics
File Size	260.63 KB
Description	POWER MOSFET
Datasheet	75NF75 Datasheet
Additional preview pages of the 75NF75 datasheet.

📁 Similar Datasheet

75NF75 - N-Channel MOSFET (INCHANGE)
75NF20 - N-channel Power MOSFET (STMicroelectronics)
75NF68 - N-channel MOSFET (STMicroelectronics)
75N05 - N-Channel MOSFET Transistor (Inchange Semiconductor)
75N05 - SUB75N05 (Vishay)
75N05E - N-Channel MOSFET (INCHANGE)
75N06 - N-Channel MOSFET Transistor (Inchange Semiconductor)
75N08 - N-CHANNEL MOSFET (CHONGQING PINGYANG)
75N08 - N-Channel MOSFET Transistor (Inchange Semiconductor)
75N08 - FDP75N08 (Fairchild Semiconductor)

Other Datasheets by Estek Electronics

Full PDF Text Transcription

Click to expand full text

75NF75 HEXFET www.DataSheet4U.com ® Power MOSFET z z z z z Dynamic dv/dt Rating 175°C Operating Temperature Fast switching Ease of Paralleling Simple Drive Requirements VDSS = 75V ID25 = 75A RDS(ON) = 13.0 mΩ Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Published: Mar 30, 2009 |