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ET6303 - P-Channel MOSFET

Features

  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • Fast Switching.
  • Lead（Pb）-free and halogen-free Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain Absolute Maximum Ratings (TA=25°C, unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Drain Current (Continuous)@TA=25°C ID Drain Current (Continuous)@TA=75°C IDM PD IS Tj, Tstg RQJA Drain.

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Datasheet preview – ET6303

Datasheet Details

Part number ET6303
Manufacturer Etek Microelectronics
File Size 746.93 KB
Description P-Channel MOSFET
Datasheet download datasheet ET6303 Datasheet
Additional preview pages of the ET6303 datasheet.

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Full PDF Text Transcription

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Eternal Semiconductor Inc. ET6303 P-Channel Enhancement-Mode MOSFET (-30V, -47A) PRODUCT SUMMARY VDSS ID -30V -47A RDS(on) (mΩ) Typ. 8.5 @ VGS = 10V, ID=20A 15@ VGS = 4.
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