EM638165
Features
Overview
- Fast access time from clock: 4.5/5.4/5.4 ns
- Fast clock rate: 200/166/143 MHz
- Fully synchronous operation
- Internal pipelined architecture
- 1M word x 16-bit x 4-bank
- Programmable Mode registers
- CAS Latency: 2 or 3
- Burst Length: 1, 2, 4, 8, or full page
- Burst Type: Sequential or Interleaved
- Burst stop function
- Optional drive strength control
- Auto Refresh and Self Refresh
- 4096 refresh cycles/64ms
- CKE power down mode
- Single +3.3V ± 0.3V power supply
- Operating Temperature: TA = 0~70°C
- Interface: LVTTL
- 54-pin 400 mil plastic TSOP II package
- Pb and Halogen Free
- 54-ball 8.0 x 8.0 x 1.2mm (max) FBGA package
- Pb free and Halogen free
The EM638165 SDRAM is a high-speed CMOS synchronous DRAM containing 64 Mbits. It is internally configured as 4 Banks of 1M word x 16 DRAM with a synchronous interface (all signals...
