EM66932A Datasheet | Etron Technology

Features Clock rate: 133/125/100 MHz Fully synchronous operation Internal pipelined architecture Four internal banks (1M x 32bit x 4bank) Programmable Mode - CAS# Latency: 1, 2 & 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential & Interleave - Burst-Read-Single-Write - Driving Strenght : Full & Half - PASR (Partial Array Self Refresh) - TCSR (Temperature pensated Self Refresh) - Burst stop function - Individual byte controlled by DQM0-3 - Auto Refresh and Self Refresh - - - - - EM66932A Preliminary (Rev 0.1 June/2003) - 4096 refresh cycles/64ms - Single 3.0V, or 3.3V power supply - Interface: LVTTL - Package : 90 ball-FBGA, 11x13mm, Lead Free 4M x 32 Hand-Held Low Power SDRAM (LPSDRAM) Ordering Information Part Number EM66932ABG-7.5G EM66932ABG-8G EM66932ABG-1H/LG Frequency 133MHz 125MHz 100MHz Package 11x13 BGA 11x13 BGA 11x13 BGA Pin Assignment : Top View 1 A B C D E F G H J K L M 2 3 4 5 6 7 8 9 DQ26 DQ28 VSSQ VSSQ VDDQ VSS A4 A7 CLK DQM1 VDDQ VSSQ VSSQ DQ11 DQ13 DQ24 VDDQ DQ27 DQ29 DQ31 DQM3 A5 A8 CKE NC DQ8 DQ10 DQ12 VDDQ DQ15 VSS VSSQ DQ25 DQ30 NC A3 A6 NC A9 NC VSS DQ9 DQ14 VSSQ VSS VDD VDDQ DQ22 DQ17 NC A2 A10 NC BA0 CAS# VDD DQ6 DQ1 VDDQ VDD DQ23 VSSQ DQ20 DQ18 DQ16 DQM2 A0 BA1 CS# WE# DQ7 DQ5 DQ3 VSSQ DQ0 DQ21 DQ19 VDDQ VDD1Q VSSQ VDD A1 A11 RAS# DQM0 VSSQ VDDQ VDDQ DQ4 DQ2 Etron Technology, Inc. No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C TEL: (886)-3-5782345 FAX: (886)-3-5778671 Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice. Etron Tech Overview 4M x 32 HH LPSDRAM The EM66932A Hand-held LPSDRAM is a 128M bits high-speed CMOS synchronous DRAM with low power consumption organized as 1,048,576 words by 32 bits by 4 banks. The Hand-held functions are new features of the size of the memory array and the refresh period during Self-Refresh to be programmable by which the self refresh current is drastically...