Etron Technology EM68932DVKB
The EM68932D is 134,217,728 bits of double data rate synchronous DRAM organized as 4 banks of 1,048,576 words by 32 bits. The synchronous operation with Data Strobe allows extremely high performance. The ranges of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.| Part No. | EM68932DVKB |
|---|---|
| Datasheet | EM68932DVKB Download |
| Manufacturer |  Etron Technology |
| Description | 4M x 32 Mobile DDR Synchronous DRAM |
| Buy | Stock & Price |
FEATURES
Fast clock rate: 166/133 MHz Differential Clock CK & CK Bi-directional DQS Four internal banks, 1M x 32-bit for each bank Edge-aligned with read data, centered in write data Programmable Mode and Extended Mode Registers - CAS Latency: 2, or 3 - Burst length: 2, 4, or 8 - Burst Type: Sequential & Interleaved - PASR (Partial Array Self Refresh) - Auto TCSR (Temperature Compensated Self Refresh) - DS (Drive Strength)● Individual byte writes mask control
● DM Write Latency = 0
● Precharge Standby Current = 100 µA
● Self Refresh Current = 200 µA
● Deep power-down Current = 10 µA max. at 85℃
● Auto Refresh and Self Refresh
● 4096 refresh cycles / 64ms
● No DLL (Delay Lock Loop), to reduce power; CK to DQS is not synchronized.
● Power supplies: VDD & VDDQ = +1.8V+0.15V/-0.1V
● Interface: LVCMOS
● Ambient Temperature TA = -25 ~ 85℃,
● 90-ball 8mm x 13mm VFBGA package - Pb and Halogen Free
●
●
●
●
●
● Part Number EM68932DVKB-6H EM68932DVKB-75H EM68932DVKB Advanced (Rev. 1.0 Aug. /2009) Table 1.
