• Part: EGN21A090IV
  • Description: High Power GaN-HEMT
  • Manufacturer: Eudyna Devices
  • Size: 220.38 KB
Download EGN21A090IV Datasheet PDF
EGN21A090IV page 2
Page 2
EGN21A090IV page 3
Page 3

Datasheet Summary

Eudyna GaN-HEMT 90W EGN21A090IV Preliminary Features - High Voltage Operation : VDS=50V - High Gain: 15dB(typ.) at Pout=42dBm(Avg.) - High Efficiency: 35%(typ.) at Pout=42dBm(Avg.) - Broad Frequency Range : 2100 to 2200MHz - Proven Reliability High Voltage - High Power GaN-HEMT DESCRIPTION The EGN21A090IV is a 90 Watt GaN-HEMT that offers high efficiency, high gain, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation. This device is targeted for high voltage, low current operation in digitally modulated Preliminary base station applications - ideally suited for W-CDMA base station amplifiers and other HPA designs while offering...