EGN21A090IV
Description
The EGN21A090IV is a 90 Watt GaN-HEMT that offers high efficiency, high gain, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation. This device is targeted for high voltage, low current operation in digitally modulated Preliminary base station applications - ideally suited for W-CDMA base station amplifiers and other HPA designs while offering ease of use.
Key Features
- High Voltage Operation : VDS=50V
- High Gain: 15dB(typ.) at Pout=42dBm(Avg.)
- High Efficiency: 35%(typ.) at Pout=42dBm(Avg.)
- Broad Frequency Range : 2100 to 2200MHz
- Proven Reliability High Voltage
- High Power GaN-HEMT
