EMC21L1004GN Datasheet | Eudyna Devices

FEATURES - High Voltage Operation : VDS=50V - High Gain: 28.5d B(typ.) at Pout=22d Bm(Avg.) - Broad Frequency Range : 2110 to 2170MHz - Proven Reliability - Small and Low Cost Metal Base Package High Voltage - High Power Ga N-HEMT Power Amplifier Module DESCRIPTION The EMC21L1004GN is a high-gain and wide-band 2-stage HIC amplifier module with 50V operation. This module is targeted for high voltage, low current operation in digitally modulated base station. This product is ideally suited not only for WCDMA base station amplifiers but also other HPA while offering ease for use. ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25o C) Rating Item Symbol Vdd1,2 Vgg1,2 P in Tstg T op DC Input Voltage (Drain) DC Input Voltage (Gate) Input Power Storage Temperature Operating Case Temperature .. REMENDED OPERATING CONDITION (Case Temperature Tc= 25o C) Condition Item Symbol DC Input Voltage (Drain) DC Input Voltage (Gate) Input Power ELECTRICAL CHARACTERISTICS (Case Temperature Tc= 25 C) Item Symbol f GL d-Ga VSWRi Idd(DC) r P m i l e Vdd1,2 Vgg1,2 P in Igg(DC) IM3 Idd a in - 0 to +52 -7 to 0 +20 -40 to +100 -20 to +85 y r o Unit V V d Bm o C o C Unit V V d Bm 50 -3 <10 Condition Limit Min. Typ. Max. 2.11 26.0 28.5 0.2 1.5:1 210 6.0 -47.0 200 2.17 31.0 0.5 2.5:1 250 15.0 -45.0 250 Unit GHz d B d Bp_p m A m A d Bc m A Frequency Linear Gain Gain Deviation Input VSWR DC Input Current DC Input Current 3rd Order Intermodulation Distortion Ratio DC Input Current Vdd1,2=50V Vgg1,2=-3.0V Pin=-10d Bm Vdd1,2=50V Vgg1,2=-3.0V Without RF Vdd1,2=50V Vgg1,2=-3.0V Pout=22d Bm(Avg.) (Note 1) Note 1 : IM3 and Idd test condition as follows: IM3&Idd : f0=2.135GHz, f1=2.145GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch 67% clipping modulation(Peak/Avg.=8.5d B@0.01% probability(CCDF)) measured over 3.84MHz at f0-10MHz and f1+10MHz. Note 2 : The RF parameters are measured with test fixture. Edition 1.0 June 2005 High Voltage - High Power Ga N-HEMT Power Amplifier Module Output...