EMM5832VU Datasheet | Eudyna Devices

FEATURES - High Output Power: Pout=31.0d Bm (typ.) - High Linear Gain: GL=23.0d B (typ.) - Broad Band: 21.2~26.5GHz - Impedance Matched Zin/Zout=50Ω - Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5832VU is a MMIC amplifier that contains a four-stage amplifier, internally matched, for standard munications band in the 21.2 to 26.5GHz frequency range. Eudyna Devices’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING Item Drain-Source Voltage Gate-Source Voltage Input Power Storage Temperature ES/EMM5832VU K-Band Power Amplifier MMIC Device の写真 Rating 10 -3 22 Unit V V d Bm ℃ Symbol VDD VGG Pin Tstg -55 to +125 REMENDED OPERATING CONDITIONS Item Symbol VDD Drain-Source Voltage Input Power Operating Case Temperature Pin TC Condition ≦7 ≦12 -40 to +85 Unit V d Bm ℃ ELECTRICAL CHARACTERISTICS (Case Temperature Ta=25℃) Item RF Frequency Range Output Power at 1d B G.C.P. Power Gain at 1d B G.C.P. Power-added Efficiency at 1d B G.C.P. Drain Current at 1d B G.C.P. 3rd. Order Intermodulation Distortion - Input Return Loss (at Pin=-20d Bm) Output Return Loss (at Pin=-20d Bm) Symbol f P1d B G1d B Nadd IDDRF IM3 RLIN RLOUT - df=+10MHz Po=20d Bm S.C.L Test Conditions VDD=+6V IDD(DC)=800m A typ. ZS=ZL=50ohm Min. 21.2 TBD TBD TBD Limits Typ. Max. 26.5 31 21 20 1000 33 -8 TBD TBD Unit GHz d Bm d B % m A d Bc d B -8 d B G.C.P. : Gain pression Point S.C.L. : Single Carrier Level ~199V Class 0 ESD Note : Based on EIAJ ED4701 C-111A(C=100p F, R=1.5kohm) CASE STYLE Edition 1.0 Aug. 2005 .. ES/EMM5832VU K-Band Power Amplifier MMIC OUTPUT POWER vs. FREQUENCY VDD=6V, IDD(DC)=800m A 34 32 Output Power [d Bm] 30 28 Preliminary OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER VDD=6V, IDD(DC)=800m A 34 32 30 Output Power [d Bm] 28 26 24 22 20 18 16 14 Drain Current 21.2GHz 23.6GHz 24.5GHz 26.5GHz 21 2GH Pout 2600 2400 2200 Drain Current [m A] 2000 1800 1600 1400 1200 1000 800 600 400 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18...