FHC40LG Datasheet | Eudyna Devices

FEATURES - Low Noise Figure: 0.3d B (Typ.)@f=4GHz - High Associated Gain: 15.5d B (Typ.)@f=4GHz - Lg ≤ 0.15µm, Wg = 280µm - Gold Gate Metallization for High Reliability - Cost Effective Ceramic Microstrip (SMT) Package - Tape and Reel Available DESCRIPTION The FH40LG is a Super High Electron Mobility Transistor TM (Super HEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-12GHz frequency range. This device is packaged in a cost effective, low parasitic, hermetically sealed .. metal-ceramic package for high volume telemunication, DBS, TVRO, VSAT or other low noise applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) Fujitsu remends the following conditions for the reliable operation of Ga As FETs: 1. The drain-source operating voltage (VDS) should not exceed 2 volts. 2. The forward and reverse gate currents should not exceed 0.2 and -0.075 m A respectively with gate resistance of 4000Ω. 3. The operating channel temperature (Tch) should not exceed 80°C. Symbol VDS VGS Ptot Tstg Tch Condition Rating 3.5 -3.0 Unit V V m W °C °C Note 290 -65 to +175 175 ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure Associated Gain Thermal Resistance AVAILABLE CASE STYLES: LG Note: RF parameters for LG devices are measured on a sample basis as follows: Lot qty. or to to or Sample qty. 125 200 315 500 Accept/Reject (0,1) (0,1) (1,2) (1,2) Symbol IDSS gm Vp VGSO NF Gas Rth Condition VDS = 2V, VGS = 0V VDS = 2V, IDS =10m A VDS = 2V, IDS =1m A IGS = -10µA Min. 10 45 -0.1 -3.0 Limit Typ. Max. 40 65 -1.0 0.30 15.5 220 85 -2.0 0.40 300 Unit m A m S V V d B d B...