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FHC40LG - Super Low Noise HEMT

General Description

The FH40LG is a Super High Electron Mobility Transistor TM (SuperHEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-12GHz frequency range.

Key Features

  • Low Noise Figure: 0.3dB (Typ. )@f=4GHz.
  • High Associated Gain: 15.5dB (Typ. )@f=4GHz.
  • Lg ≤ 0.15µm, Wg = 280µm.
  • Gold Gate Metallization for High Reliability.
  • Cost Effective Ceramic Microstrip (SMT) Package.
  • Tape and Reel Available.

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Datasheet Details

Part number FHC40LG
Manufacturer Eudyna Devices
File Size 118.97 KB
Description Super Low Noise HEMT
Datasheet download datasheet FHC40LG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB (Typ.)@f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package • Tape and Reel Available DESCRIPTION The FH40LG is a Super High Electron Mobility Transistor TM (SuperHEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-12GHz frequency range. This device is packaged in a cost effective, low parasitic, hermetically sealed www.DataSheet4U.com metal-ceramic package for high volume telecommunication, DBS, TVRO, VSAT or other low noise applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.