Eudyna Devices FHC40LG
The FH40LG is a Super High Electron Mobility Transistor TM (SuperHEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-12GHz frequency range. This device is packaged in a cost effective, low parasitic, hermetically sealed metal-ceramic package for high volume telecommunication, DBS, TVRO, VSAT or other low noise applications.| Part No. | FHC40LG |
|---|---|
| Datasheet | FHC40LG Download |
| Manufacturer |  Eudyna Devices |
| Description | Super Low Noise HEMT |
| Buy | Stock & Price |
FEATURES
● Low Noise Figure: 0.3dB (Typ.)@f=4GHz● High Associated Gain: 15.5dB (Typ.)@f=4GHz
● Lg ≤ 0.15µm, Wg = 280µm
● Gold Gate Metallization for High Reliability
● Cost Effective Ceramic Microstrip (SMT) Package
● Tape and Reel Available
DESCRIPTION
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 2 volts. 2. The forward and reverse gate currents should not exceed 0.2 and -0.075 mA respectively with gate resistance of 4000Ω. 3. The operating channel temperature (Tch) should not exceed 80°C. Symbol VDS VGS Ptot Tstg Tch Condition Rating 3.5 -3.0 Unit V V mW °C °C Note 290 -...
