FHC40LG - Super Low Noise HEMT

Description

The FH40LG is a Super High Electron Mobility Transistor TM (SuperHEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-12GHz frequency range.

Features

Low Noise Figure: 0.3dB (Typ. )@f=4GHz.
High Associated Gain: 15.5dB (Typ. )@f=4GHz.
Lg ≤ 0.15µm, Wg = 280µm.
Gold Gate Metallization for High Reliability.
Cost Effective Ceramic Microstrip (SMT) Package.
Tape and Reel Available.

Eudyna Devices

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Datasheet Details

Part number	FHC40LG
Manufacturer	Eudyna Devices
File Size	118.97 KB
Description	Super Low Noise HEMT
Datasheet	FHC40LG Datasheet
Additional preview pages of the FHC40LG datasheet.

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Full PDF Text Transcription

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FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB (Typ.)@f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package • Tape and Reel Available DESCRIPTION The FH40LG is a Super High Electron Mobility Transistor TM (SuperHEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-12GHz frequency range. This device is packaged in a cost effective, low parasitic, hermetically sealed www.DataSheet4U.com metal-ceramic package for high volume telecommunication, DBS, TVRO, VSAT or other low noise applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

Published: Dec 27, 2008 |