FHX76LP Datasheet | Eudyna Devices

FEATURES - Low Noise Figure: NF=0.40d B (Typ.)@f=12GHz - High Associated Gain: Gas=13.5d B (Typ.)@f=12GHz - High Reliability - Small Size SMT Package - Tape and Reel Packaging Available Super Low Noise HEMT DESCRIPTION The FHX76LP is a low noise Super HEMTTMproduct designed for DBS applications. This device uses a small ceramic package that is optimized for high volume cost driven requirements. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25°C) Parameter Symbol Condition Rating Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Pt Note Storage Temperature TSTG Channel Temperature Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) Eudyna remends the following conditions for the reliable operation of Ga As FETs: 1. The drain-source operating voltage (VDS) should not exceed 2 volts. 2. The forward and reverse gate currents should not exceed 0.2 and -0.05 m A respectively with gate resistance of 4000Ω. 3. The operating channel temperature (Tch) should not exceed 80°C. 3.5 -3.0 180 -65 to 150 150 ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Symbol Conditions Limits Min. Typ. Max. Saturated Drain Current IDSS VDS = 2V, VGS=0V 10 30 60 Transconductance...