FLK017WF Description
The FLK017WF is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature...
FLK017WF Key Features
- High Output Power: P1dB = 20.5dBm(Typ.) High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Herm