Datasheet4U Logo Datasheet4U.com

FLL107ME - L-BAND MEDIUM & HIGH POWER GAAS FET

General Description

The FLL107ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices.

The performance in multitone environments for Class AB operation make them ideally suited for base station applications.

Key Features

  • High Output Power: P1dB=29.5dBm (Typ. ) High Gain: G1dB=13.5dB (Typ. ) High PAE: ηadd=47% (Typ. ) Proven Reliability Hermetically Sealed Package.

📥 Download Datasheet

Datasheet Details

Part number FLL107ME
Manufacturer Eudyna Devices
File Size 188.34 KB
Description L-BAND MEDIUM & HIGH POWER GAAS FET
Datasheet download datasheet FLL107ME Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FLL107ME L-BAND MEDIUM & HIGH POWER GAAS FET Fujitsu
FLL100 Capacitor FAAM
FLL177ME L-BAND MEDIUM & HIGH POWER GAAS FET Fujitsu
FLL200 The Relationship for Open Circuit Voltage and Residual Capacity FAAM
FLL300IL-1 L-band Medium & High Power GAAS Fets Fujitsu Microelectronics

Other Datasheets by Eudyna Devices

Part Number Description
FLL120MK L-Band Medium & High Power GaAs FET
FLL200IB-1 (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
FLL200IB-2 (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
FLL200IB-3 (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
FLL21E004ME High Voltage - High Power GaAs FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FLL107ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=29.5dBm (Typ.) High Gain: G1dB=13.5dB (Typ.) High PAE: ηadd=47% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL107ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. This device is assembled in hermetic metal/ceramic package. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.