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FLL21E004ME - High Voltage - High Power GaAs FET

General Description

The FLL21E004ME is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers.

This device is targeted for high voltage, low current operation in digitally modulated amplification.

Key Features

  • High Voltage Operation : VDS=28V High Power : P1dB=36dBm(typ. ) at f=2.17GHz High Gain: G1dB=14dB(typ. ) at f=2.17GHz Broad Frequency Range : 2100 to 2200MHz Proven Reliability High Voltage - High Power GaAs FET.

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Datasheet Details

Part number FLL21E004ME
Manufacturer Eudyna Devices
File Size 310.78 KB
Description High Voltage - High Power GaAs FET
Datasheet download datasheet FLL21E004ME Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FLL21E004ME FEATURES High Voltage Operation : VDS=28V High Power : P1dB=36dBm(typ.) at f=2.17GHz High Gain: G1dB=14dB(typ.) at f=2.17GHz Broad Frequency Range : 2100 to 2200MHz Proven Reliability High Voltage - High Power GaAs FET DESCRIPTION The FLL21E004ME is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is targeted for high voltage, low current operation in digitally modulated amplification. This product is ideally suited for W-CDMA and Multi-carrier PCS base station amplifiers while offering high gain, long term reliability and ease of use.