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FLL57MK - L-Band Medium & High Power GaAs FET

Description

The FLL57MK is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices.

The performance in multitone environments for Class AB operation make them ideally suited for base station applications.

Features

  • High Output Power: P1dB = 36.0dBm (Typ. ).
  • High Gain: G1dB = 11.5dB (Typ. ).
  • High PAE: ηadd = 37% (Typ. ).
  • Proven Reliability.
  • Hermetically Sealed Package.

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Datasheet Details

Part number FLL57MK
Manufacturer Eudyna Devices
File Size 136.12 KB
Description L-Band Medium & High Power GaAs FET
Datasheet download datasheet FLL57MK Datasheet

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Full PDF Text Transcription

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FLL57MK L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB = 36.0dBm (Typ.) • High Gain: G1dB = 11.5dB (Typ.) • High PAE: ηadd = 37% (Typ.) • Proven Reliability • Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Eudyna stringent Quality Assurance Program assures the highest reliability and consistent performance.
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