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FLM1011-12F - Ku-Band Internally Matched FET

General Description

The FLM1011-12F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.

Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

Key Features

  • High Output Power: P1dB = 40.5dBm (Typ. ) High Gain: G1dB = 6.0dB (Typ. ) High PAE: ηadd = 25% (Typ. ) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed.

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Datasheet Details

Part number FLM1011-12F
Manufacturer Eudyna Devices
File Size 284.42 KB
Description Ku-Band Internally Matched FET
Datasheet download datasheet FLM1011-12F Datasheet

Full PDF Text Transcription for FLM1011-12F (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FLM1011-12F. For precise diagrams, and layout, please refer to the original PDF.

FLM1011-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm (Typ.) High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 25% (Typ.) L...

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Bm (Typ.) High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 25% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM1011-12F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Ts

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