FLM3135-4F Datasheet | Eudyna Devices

FEATURES - High Output Power: P1d B = 36.5d Bm (Typ.) - High Gain: G1d B = 12.0d B (Typ.) - High PAE: ηadd = 38% (Typ.) - Low IM3 = -45d Bc@Po = 25.5d Bm - Broad Band: 3.1 ~ 3.5GHz - Impedance Matched Zin/Zout = 50Ω - Hermetically Sealed Package C-Band Internally Matched FET DESCRIPTION The FLM3135-4F is a power Ga As FET that is internally matched for standard munication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Symbol Condition Rating Unit Drain-Source Voltage Gate-Source Voltage VDS VGS -5 Total Power Dissipation Tc = 25°C Storage Temperature Tstg -65 to +175 Channel Temperature Tch Fujitsu remends the following conditions for the reliable operation of Ga As FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 16.0 and -2.2 m A respectively with gate resistance of 100Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Symbol IDSS...