FLM3742-12F Datasheet | Eudyna Devices

FEATURES - - - - - - - High Output Power: P1d B = 41.5d Bm (Typ.) High Gain: G1d B = 11.5d B (Typ.) High PAE: ηadd = 40% (Typ.) Low IM3 = -46d Bc@Po = 30.5d Bm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package DESCRIPTION The FLM3742-12F is a power Ga As FET that is internally matched for standard munication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 57.6 -65 to +175 175 Unit V V W °C °C Fujitsu remends the following conditions for the reliable operation of Ga As FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 32.0 and -5.6 m A respectively with gate resistance of 50Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1d B G.C.P. Power Gain at 1d B G.C.P. Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE: IK Symbol IDSS gm Vp VGSO P1d B G1d B Idsr ηadd ∆G IM3 Rth ∆Tch f = 4.2 GHz, ∆f = 10 MHz 2-Tone Test Pout = 30.5d Bm S.C.L. Channel to Case 10V x Idsr x Rth VDS =10V, IDS = 0.55 IDSS (Typ.), f = 3.7 ~ 4.2 GHz, ZS=ZL= 50 ohm Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 3400m A VDS = 5V, IDS = 300m A IGS = -300µA Min. -1.0 -5.0 40.5 10.5 -44 Limit Typ. Max. 5800 8700 2900 -2.0 41.5 11.5 -3.5 Unit m A m S V V d Bm d B m A % d B d Bc °C/W °C 3250 3800 40 -46 2.3 ±0.6 2.6 80 G.C.P.: Gain pression Point, S.C.L.: Single Carrier Level Edition 1.3 August 2004 .. C-Band Internally Matched FET POWER...