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FLM5964-25F - C-Band Internally Matched FET

General Description

D .

The FLM5964-25F is a power GaAs FET that is internally matched for w standard communication bands to provide optimum power and gain in a w 50 ohm system.

Key Features

  • . c.
  • High Output Power: P1dB = 44.5dBm (Typ. ) U.
  • High Gain: G1dB = 10.0dB (Typ. ) 4 t.
  • High PAE: ηadd = 37% (Typ. ) e = 33.5dBm.
  • Low IM3 = -46dBc@Po e.
  • Broad Band: 5.9h ~ 6.4GHz S.
  • Impedance Matched Zin/Zout = 50Ω aSealed Package t.
  • Hermetically a.

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Datasheet Details

Part number FLM5964-25F
Manufacturer Eudyna Devices
File Size 316.22 KB
Description C-Band Internally Matched FET
Datasheet download datasheet FLM5964-25F Datasheet

Full PDF Text Transcription for FLM5964-25F (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FLM5964-25F. For precise diagrams, and layout, please refer to the original PDF.

w m C-Band Internally Matched FET o FEATURES .c • High Output Power: P1dB = 44.5dBm (Typ.) U • High Gain: G1dB = 10.0dB (Typ.) 4 t • High PAE: ηadd = 37% (Typ.) e = 33.5d...

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Gain: G1dB = 10.0dB (Typ.) 4 t • High PAE: ηadd = 37% (Typ.) e = 33.5dBm • Low IM3 = -46dBc@Po e • Broad Band: 5.9h ~ 6.4GHz S • Impedance Matched Zin/Zout = 50Ω aSealed Package t • Hermetically a DESCRIPTION D . The FLM5964-25F is a power GaAs FET that is internally matched for w standard communication bands to provide optimum power and gain in a w 50 ohm system. Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Condition FLM5964-25F Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.