The FLM5964-4F is a power GaAs FET that is internally matched for w standard communication bands to provide optimum power and gain in a w 50 ohm system.
Key Features
. c.
High Output Power: P1dB = 36.5dBm (Typ. ) U.
High Gain: G1dB =10.0dB (Typ. ) 4 t.
High PAE: ηadd = 37% (Typ. ) e = 25.5dBm.
Low IM3 = -46dBc@Po e.
Broad Band: 5.9h ~ 6.4GHz S.
Impedance Matched Zin/Zout = 50Ω aSealed Package t.
Full PDF Text Transcription for FLM5964-4F (Reference)
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FLM5964-4F. For precise diagrams, and layout, please refer to the original PDF.
wEudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. Item Drain-Source Voltage Gate-Source Voltage Total Power Dissip...
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ance. Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Condition m C-Band Internally Matched FET o FEATURES .c • High Output Power: P1dB = 36.5dBm (Typ.) U • High Gain: G1dB =10.0dB (Typ.) 4 t • High PAE: ηadd = 37% (Typ.) e = 25.5dBm • Low IM3 = -46dBc@Po e • Broad Band: 5.9h ~ 6.4GHz S • Impedance Matched Zin/Zout = 50Ω aSealed Package t • Hermetically a DESCRIPTION D . The FLM5964-4F is a power GaAs FET that is internally matched for w standard communication bands to provide optimum power and gain in a w 50 ohm system.
FLM5964-4F Datasheet
