FLM5964-4F Overview
The FLM5964-4F is a power GaAs FET that is internally matched for w standard munication bands to provide optimum power and gain in a w 50 ohm system. FLM5964-4F RATING (Ambient Temperature Ta=25°C) Tc = 25°C Fujitsu remends the following conditions for the reliable operation of GaAs FETs: The drain-source operating voltage (VDS) should not exceed 10 volts.
FLM5964-4F Key Features
- High Output Power: P1dB = 36.5dBm (Typ.) U
- High Gain: G1dB =10.0dB (Typ.) 4 t
- High PAE: ηadd = 37% (Typ.) e = 25.5dBm
- Low IM3 = -46dBc@Po e
- Broad Band: 5.9h ~ 6.4GHz S
- Impedance Matched Zin/Zout = 50Ω aSealed Package t
- Hermetically a DESCRIPTION D . The FLM5964-4F is a power GaAs FET that is internally matched for w standard munication b
