FLM7185-6F
FLM7185-6F is Internally Matched FET manufactured by Eudyna Devices.
FEATURES
C-Band Internally Matched FET
- High Output Power: P1d B = 38.0d Bm (Typ.)
- High Gain: G1d B = 8.0d B (Typ.)
- High PAE: ηadd = 30% (Typ.)
- Low IM3 = -45d Bc@Po = 27.0d Bm
- Broad Band: 7.1 ~ 8.5GHz
- Impedance Matched Zin/Zout = 50Ω
- Hermetically Sealed Package
DESCRIPTION
The FLM7185-6F is a power Ga As FET that is internally matched for standard munication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
-5
Total Power Dissipation
Tc = 25°C
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
°C
Fujitsu remends the following conditions for the reliable operation of Ga As FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 16.0 and -2.8 m A respectively with gate resistance of 100Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature...
