FLX207MH-12 Overview
The FLX207MH-12 is a power GaAs FET that is designed for general purpose applications in the X-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel...
FLX207MH-12 Key Features
- High Output Power: P1dB = 32.5dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 28%(Typ.) Proven Reliability Herm