FLX207MH-12 Description
The FLX207MH-12 is a power GaAs FET that is designed for general purpose applications in the X-Band frequency range as it provides superior power, gain, and efficiency. Eudyna stringent Quality Assurance Program assures the highest reliability and consistent performance. RATING (Ambient Temperature Ta=25°C) Item Symbol Condition Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Tc = 25°C...
FLX207MH-12 Key Features
- High Output Power: P1dB = 32.5dBm(Typ.)
- High Gain: G1dB = 7.0dB(Typ.)
- High PAE: ηadd = 28%(Typ.)
- Proven Reliability
- Hermetic Metal/Ceramic Package