FRM5N142GW Description
The FRM5N142GW incorporates a high bandwidth InGaAs APD photo diode, a GaAs HBT IC amplifier in a hermetically sealed Small Form Factor package (SFF). The APD is processed with modern MOVPE techniques resulting in a reliable performance over a wide range of operating conditions. The lens coupling system and the single mode fiber are assembled using Nd YAG welding.
FRM5N142GW Key Features
- Small Form Factor Package(GW): 9 pins coplanar
- Integrated Design Optimizes Performance at Bit Rates up to 10.7Gb/s
- High Gain: 4kΩ(Single-ended), 8kΩ(Differential)
- High Sensitivity: -27dBm (typ.)
- Electrical Differential Output
- Wide Bandwidth: 8.5GHz (typ.)
- Operates in both C and L wavelength bands
- Wide Operating Temperature Range: -5°C to +75°C