Eudyna Devices FSU01LG
The FSU01LG is a high performance, low noise, GaAs FET designed for PCS/PCN applications as a driver in the 2GHz band. The drain-source operating voltage (VDS) should not exceed 6 volts. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with gate resistance of 2000Ω.| Part No. | FSU01LG |
|---|---|
| Datasheet | FSU01LG Download |
| Manufacturer |  Eudyna Devices |
| Description | General Purpose GaAs FET |
| Buy | Stock & Price |
FEATURES
● High Output Power: P1dB = 20.0dBm (Typ.)● High Associated Gain: G1dB = 19.0dB (Typ.)
● Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz
● Low Bias Conditions: VDS=3V, 10mA
● Cost Effective Hermetic Microstrip Package
● Tape and Reel Available FSU01LG General Purpose GaAs FET
DESCRIPTION
Eudyna stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Symbol Condition Rating Unit Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation Ptot Note Storage Temperature Tstg Channel Temperature Tch Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. 2. 3. The operating channel temperature (Tch) should not exceed 145°C. 12.0 -5 375 -65 to +175 175 V V mW °C °CELECTRICAL CHARACTERISTICS
(Ambient Temperature Ta=25°C) Item Symbol Test Conditions Saturated Drain Current Transconductance Pinch-off V...
