Datasheet4U Logo Datasheet4U.com

ELM1314-9F - Ku-Band Internally Matched FET

General Description

The ELM1314-9F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system.

Key Features

  • High Output Power: P1dB=39.5dBm(Typ. ).
  • High Gain: G1dB=6.0dB(Typ. ).
  • High PAE: ηadd=30%(Typ. ).
  • Broad Band: 13.75 to 14.5GHz.
  • Impedance Matched Zin/Zout = 50ohm.
  • Hermetically Sealed Package.

📥 Download Datasheet

Datasheet Details

Part number ELM1314-9F
Manufacturer Eudyna
File Size 277.22 KB
Description Ku-Band Internally Matched FET
Datasheet download datasheet ELM1314-9F Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ELM1314-30F-001 Ku-Band Internally Matched FET SUMITOMO
ELM13400CA-S Single N-channel MOSFET ELM Technology Corporation
ELM13401CA-S Single P-channel MOSFET ELM Technology Corporation
ELM13402CA-S Single MOSFET ELM Technology Corporation
ELM13403CA-S Single MOSFET ELM Technology Corporation

Other Datasheets by Eudyna

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ELM1314-9F Ku-Band Internally Matched FET FEATURES •High Output Power: P1dB=39.5dBm(Typ.) •High Gain: G1dB=6.0dB(Typ.) •High PAE: ηadd=30%(Typ.) •Broad Band: 13.75 to 14.5GHz •Impedance Matched Zin/Zout = 50ohm •Hermetically Sealed Package DESCRIPTION The ELM1314-9F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATINGS Item Drain-Source Voltage (Tc=25deg.C) Gate-Source Voltage (Tc=25deg.C) Total Pow er Dissipation Storage Tem perature Channel Tem perature Symbol V DS V GS PT Tstg Tch Rating 15 -5 35.7 -55 to +125 +175 Unit V V W deg.C deg.