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FLM1213-6F - X / Ku-Band Internally Matched FET

General Description

The FLM1213-6F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system.

Key Features

  • High Output Power: P1dB=37.5dBm(Typ. ).
  • High Gain: G1dB=7.0dB(Typ. ).
  • High PAE: ηadd=27%(Typ. ).
  • Low IM3 =-46dBc(Typ. ) @Po=26.5dBm.
  • Broad Band: 12.7 to 13.2GHz.
  • Impedance Matched Zin/Zout = 50ohm.
  • Hermetically Sealed Package X,Ku-Band Internally Matched FET.

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Datasheet Details

Part number FLM1213-6F
Manufacturer Eudyna
File Size 364.45 KB
Description X / Ku-Band Internally Matched FET
Datasheet download datasheet FLM1213-6F Datasheet

Full PDF Text Transcription for FLM1213-6F (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FLM1213-6F. For precise diagrams, and layout, please refer to the original PDF.

FLM1213-6F FEATURES •High Output Power: P1dB=37.5dBm(Typ.) •High Gain: G1dB=7.0dB(Typ.) •High PAE: ηadd=27%(Typ.) •Low IM3 =-46dBc(Typ.) @Po=26.5dBm •Broad Band: 12.7 to ...

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add=27%(Typ.) •Low IM3 =-46dBc(Typ.) @Po=26.5dBm •Broad Band: 12.7 to 13.2GHz •Impedance Matched Zin/Zout = 50ohm •Hermetically Sealed Package X,Ku-Band Internally Matched FET DESCRIPTION The FLM1213-6F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Drain-Source Voltage Gate-Source Voltage Total Pow er Dissipation Storage Tem perature Channel Tem perature Symbol V DS V GS PT Tstg Tch Rating 15 -5 31.2 -65 to +175 175 Unit V V W deg.C deg.C RECOMMENDED OPERATING CONDITION (Case Te

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