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FLM1213-6F
FEATURES •High Output Power: P1dB=37.5dBm(Typ.) •High Gain: G1dB=7.0dB(Typ.) •High PAE: ηadd=27%(Typ.) •Low IM3 =-46dBc(Typ.) @Po=26.5dBm •Broad Band: 12.7 to 13.2GHz •Impedance Matched Zin/Zout = 50ohm •Hermetically Sealed Package
X,Ku-Band Internally Matched FET
DESCRIPTION The FLM1213-6F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C)
Item Drain-Source Voltage Gate-Source Voltage Total Pow er Dissipation Storage Tem perature Channel Tem perature Symbol V DS V GS PT Tstg Tch Rating 15 -5 31.2 -65 to +175 175 Unit V V W deg.C deg.C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25deg.