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FLM1314-12F
X, Ku-Band Internally Matched FET FEATURES
• • • • • • • High Output Power: P1dB = 41.0dBm (Typ.) High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Low IM3 = -45dBc@Po = 29.0dBm Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed
DESCRIPTION
The FLM1314-12F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 75 -65 to +175 175 Unit V V W °C °C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1.
FLM1314-12F Datasheet
