Full PDF Text Transcription for FLM1314-18F (Reference)
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FLM1314-18F. For precise diagrams, and layout, please refer to the original PDF.
FLM1314-18F Ku-Band Internally Matched FET FEATURES •High Output Power: P1dB=42.5dBm(Typ.) •High Gain: G1dB=6.0dB(Typ.) •High PAE: ηadd=27%(Typ.) •Broad Band: 13.75 to 14...
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n: G1dB=6.0dB(Typ.) •High PAE: ηadd=27%(Typ.) •Broad Band: 13.75 to 14.5GHz •Impedance Matched Zin/Zout = 50ohm •Hermetically Sealed Package DESCRIPTION The FLM1314-18F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Drain-Source Voltage Gate-Source Voltage Total Pow er Dissipation Storage Tem perature Channel Tem perature Symbol V DS V GS PT Tstg Tch Rating 15 -5 75 -65 to +150 175 Unit V V W deg.C deg.C RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25deg.
FLM1314-18F Datasheet
