BSM35GD120DN2 Datasheet | Eupec GmbH

.. BSM 35 GD 120 DN2 IGBT Power Module - Power module - 3-phase full-bridge - Including fast free-wheel diodes - Package with insulated metal base plate Type BSM 35 GD 120 DN2 BSM35GD120DN2E3224 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 kΩ Gate-emitter voltage DC collector current TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C Power dissipation per IGBT TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1...