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Technische Information / Technical Information
IGBT-Module IGBT-Modules
FP10R12KE3
Vorläufig Preliminary
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage Durchlaßstrom Grenzeffektivwert pro Chip RMS forward current per chip Gleichrichter Ausgang Grenzeffektivstrom maximum RMS current at Rectifier output T vj =25°C T C =80°C T C =80°C tP = 10 ms, T vj = tP = 10 ms, T vj = 25°C 25°C VRRM IFRMSM IRMSmax IFSM I2t 1600 25 36 196 158 192 125 V A A A A A2s A2s
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FP10R12KE3 Datasheet
