FZ200R65KF1
FZ200R65KF1 is IGBT manufactured by Eupec GmbH.
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 200 R 65 KF1
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom .. repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t
- value, Diode Isolations-Prüfspannung insulation test voltage Teilentladungs Aussetzspannung partial discharge extinction voltage t P = 1 ms Tvj=125°C Tvj=25°C Tvj=-40°C TC = 80 °C TC = 25 °C t P = 1 ms, T C = 80°C VCES IC,nom. IC ICRM 6500 6300 5800 200 400 400 V A A A
TC=25°C, Transistor
Ptot
3,8 k W
VGES
+/- 20V
IFRM
VR = 0V, tp = 10ms, T Vj = 125°C
I2t
26 k A2s
RMS, f = 50 Hz, t = 1 min.
VISOL
10,2 k V
RMS, f = 50 Hz, QPD typ. 10p C (acc. To IEC 1287)
VISOL
5,1 k V
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazität input capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 200A, VGE = 15V, Tvj = 25°C IC = 200A, VGE = 15V, Tvj = 125°C IC = 35m A, VCE = VGE, Tvj = 25°C VGE(th) VCE sat min.
6,4 typ.
4,3 5,3 7,0 max.
4,9 5,9 8,1 V V V
VGE = -15V ... +15V
- 2,8
- µC f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V VCE = 6300V, VGE = 0V, Tvj = 25°C VCE = 6500V, VGE = 0V, Tvj = 125°C VCE = 0V, VGE = 20V, Tvj = 25°C
Cies
- 28 0,2 20
- - n F m A m A n A
ICES
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