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Technische Information / Technical Information
IGBT-Module IGBT-Modules
FF200R12KS4
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode 2 I t - value, Diode Isolations-Prüfspannung insulation test voltage tP = 1 ms Tvj= 25° C TC = 70 °C TC = 25 °C tP = 1 ms, TC = 80°C VCES IC,nom.
FF200R12KS4 Datasheet
