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Technische Information / technical information
IGBT-Module IGBT-Modules
FS35R12KE3 G
Höchstzulässige Werte / maximum rated values
Elektrische Eigenschaften / electrical properties
Kollektor Emitter Sperrspannung collector emitter voltage
Tvj= 25°C
Kollektor Dauergleichstrom DC collector current
Periodischer Kollektor Spitzenstrom repetitive peak collector current
Tc= 80°C Tc= 25°C
tp= 1ms, Tc= 80°C
Gesamt Verlustleistung total power dissipation
Tc= 25°C; Transistor
Gate Emitter Spitzenspannung gate emitter peak voltage
Dauergleichstrom DC forward current
Periodischer Spitzenstrom repetitive peak forward current
tp= 1ms
Grenzlastintegral I²t value
VR= 0V, tp= 10ms, Tvj= 125°C
Isolations Prüfspannung insulation test voltage
RMS, f= 50Hz, t= 1min.
FS35R12KE3G Datasheet
