TD200F Datasheet | Eupec

.. European Power Semiconductor and Electronics pany Marketing Information TT 200 F 35 28,5 5 .. 80 9 18 M8 92 18 K K1 G1 K2 G2 VWK Okt. 1996 . .. 4U. Data Sheet 4 U . .. Elektrische Eigenschaften Höchstzulässige Werte TT 200 F, TD 200 F, DT 200 F Periodische Vorwärts- und Rückwärts- repetitive peak forward off-state and tvj = -40°C...t vj max Spitzensperrspannung reverse voltages Vorwärts-Stoßspitzenspannung non-repetitive peak forward off-state tvj = -40°C...t vj max voltage Rückwärts-Stoßspitzenspannung non-repetitive peak reverse voltage tvj = +25°C...t vj max Durchlaßstrom-Grenzeffektivwert Dauergrenzstrom Stoßstrom-Grenzwert Grenzlastintegral Kritische Stromsteilheit Kritische Spannungssteilheit RMS on-state current average on-state current surge current ∫I2 t-value critical rate of rise of on-state current tc = 85°C tc = 68°C tvj = 25°C, t p = 10 ms tvj = tvj max , tp = 10 ms tvj = 25°C, t p = 10 ms tvj = tvj max , tp = 10 ms VD≤67%VDRM , f0=50Hz IGM =1A, di G/dt=1A/µs critical rate of rise of off-state voltage tvj = tvj max , VD = 67% V DRM 6.Kennbuchstabe/6th letter B 6.Kennbuchstabe/6th letter C 6.Kennbuchstabe/6th letter L 6.Kennbuchstabe/6th letter M tvj = tvj max , i T = 700 A tvj = tvj max tvj = tvj max tvj = 25 °C, v D = 6 V tvj = 25 °C, v D = 6 V tvj = tvj max , v D = 6 V tvj = tvj max , v D = 0,5 V DRM tvj = 25 °C, v D = 6 V, R A = 10 Ω tvj = 25 °C,v D = 6 V, R GK > = 20 Ω i GM = 1 A, di G/dt = 1 A/µs, t g = 10 µs tvj = tvj max v D = VDRM , v R = VRRM tvj = 25°C, i GM =1 A, di G/dt =1 A/µs Electrical properties Maximum rated values VDRM , VRRM VDSM = VDRM VRSM = VRRM ITRMSM ITAVM ITSM ∫I2 t (di T/dt)cr (dv D/dt)cr 800 1000 1100 1200 1300 + 100 410 200 261 7200 6400 260000 205000 200 1) 2) V A A A A A A2s A2s A/µs 50 50 500 500 500 50 1000 500 V/µs V/µs V/µs V/µs V V mΩ m A V m A V m A A m A µs µs µs µs k V °C/W °C/W °C/W °C/W °C/W Charakteristische Werte Durchlaßspannung Schleusenspannung Ersatzwiderstand Zündstrom Zündspannung...