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EL816 - 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

General Description

The EL816 series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector.

They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.

Programmable controllers System appliances, measurin

Key Features

  • Current transfer ratio (CTR: 50~600% at IF =5mA, VCE =5V) (CTR: 63~320% at IF =10mA, VCE =5V).
  • High isolation voltage between inputs and output (Viso=5000 V rms).
  • Creepage distance >7.62 mm.
  • Operating temperature up to +110°C.
  • Compact small outline package.
  • Pb free and RoHS compliant.
  • UL approved (No. E214129).
  • VDE approved (No. 132249).
  • SEMKO approved.
  • NEMKO approved.
  • DEMKO approved.
  • F.

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Datasheet Details

Part number EL816
Manufacturer Everlight
File Size 850.44 KB
Description 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
Datasheet download datasheet EL816 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER EL816 Series Schematic Features: • Current transfer ratio (CTR: 50~600% at IF =5mA, VCE =5V) (CTR: 63~320% at IF =10mA, VCE =5V) • High isolation voltage between inputs and output (Viso=5000 V rms) • Creepage distance >7.62 mm • Operating temperature up to +110°C • Compact small outline package • Pb free and RoHS compliant. • UL approved (No. E214129) • VDE approved (No. 132249) • SEMKO approved • NEMKO approved • DEMKO approved • FIMKO approved • CSA approved Pin Configuration 1. Anode 2. Cathode 3. Emitter 4. Collector Description The EL816 series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector. They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.