IR7373C Datasheet | Everlight

Features ․High reliability ․2.54mm lead spacing ․Low forward voltage ․Good spectral matching to Si photodetector ․High radiant intensity ․Pb free ․The product itself will remain within Ro HS pliant version. Descriptions EVERLIGHT’s infrared emitting diode (IR7373C) is a high intensity diode, molded in a water clear plastic package. The device is spectrally matched with phototransistor, photodiode and infrared receive module. Applications ․Free air transmission system ․Optoelectronic switch ․Floppy disk drive ․Infrared applied system ․Smoke detector Device Selection Guide LED Part No. IR Chip Material Ga Al As Lens Color Water clear Everlight Electronics Co., Ltd. Device No：DIR-737-279 http:\.everlight. Prepared date：08-26-2005 Rev 2 Page: 1 of 7 Prepared by：JAINE TSAI Package Dimensions Notes: 1.All dimensions are in millimeters 2.Tolerances unless dimensions ±0.25mm Absolute Maximum Ratings (Ta=25℃) Parameter Continuous Forward Current Peak Forward Current Reverse Voltage Operating Temperature Storage Temperature Soldering Temperature - 2 Power Dissipation at(or below) 25℃Free Air Temperature - 1 Symbol IF IFP VR Topr Tstg Tsol Pd Rating 100 1.0 5 -40 ~ +85 -40 ~ +85 260 150 Units m A A V ℃ ℃ ℃ m W Notes: - 1:IFP Conditions--Pulse Width≦100μs and Duty≦1%. - 2:Soldering time≦5 seconds. Everlight Electronics Co., Ltd. Device No：DIR-737-279 http:\.everlight. Prepared date：08-26-2005 Rev 2 Page: 2 of 7 Prepared by：JAINE TSAI Electro-Optical Characteristics (Ta=25℃) Parameter Symbol Condition IF=20m A IF=100m A Radiant Intensity Ie Pulse Width≦100μs and Duty≦1% Min. 5.6 ---------- Typ. Max. 8.0 30 370 940 45 1.2 1.4 2.6 -50 -----1.5 1.8 4.0 10 -- Units m W/sr IF=1A Pulse Width≦100μs and Duty≦1% Peak Wavelength Spectral Bandwidth λp Δλ IF=20m A IF=20m A IF=20m A IF=100m A nm nm Forward Voltage Pulse Width≦100μs and...