MR2A16A
Description
RoHS The MR2A16A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device orga- nized as 262,144 words of 16 bits.
Key Features
- Fast 35 ns Read/Write cycle
- Unlimited Read & Write endurance
- Data non-volatile for >20 years at temperature
- One memory replaces Flash, SRAM, EEPROM and
- Replaces battery-backed SRAM solutions with MRAM
- 3.3 volt power supply
- Automatic data protection on power loss
- mercial, Industrial, Extended temperatures
- AEC-Q100 Grade 1 option
- All products meet MSL-3 moisture sensitivity level
