MR4A16B Overview
MR4A16B.
MR4A16B Key Features
- +3.3 Volt power supply
- Fast 35 ns read/write cycle
- SRAM patible timing
- Unlimited read & write endurance
- Data always non-volatile for >20 years at temperature
- RoHS-pliant small footprint BGA and TSOP2 package
- All products meet MSL-3 moisture sensitivity level
- One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems for simpler, more efficient designs
- Improves reliability by replacing battery-backed SRAM