MR4A16B Datasheet | Everspin

FEATURES - +3.3 Volt power supply - Fast 35 ns read/write cycle - SRAM patible timing - Unlimited read & write endurance - Data always non-volatile for >20 years at temperature - Ro HS-pliant small footprint BGA and TSOP2 package - All products meet MSL-3 moisture sensitivity level BENEFITS - One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems for simpler, more efficient designs - Improves reliability by replacing battery-backed SRAM 1M x 16 MRAM INTRODUCTION The MR4A16B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 1,048,576 words of 16 bits. The MR4A16B offers Ro HS SRAM patible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20 years. Data is automatically pro- tected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. To simplify fault tolerant design, the MR4A16B includes internal single...