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XR-2011 - High-Current Darlington Transistor Arrays

Datasheet Summary

Description

The XR-2011/2012/2013/2014 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic substrate.

All units feature open collector outputs and integral protection diodes for driving inductive loads.

Features

  • Peak Inrush Current Capability of 750 mA Internal Protection Diodes for Driving Inductive Loads Excellent Noise Immunity Direct Compatibility with Most Logic Families Opposing Pin Configuration Eases Circuit Soard Layout.

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Datasheet Details

Part number XR-2011
Manufacturer Exar
File Size 145.60 KB
Description High-Current Darlington Transistor Arrays
Datasheet download datasheet XR-2011 Datasheet
Additional preview pages of the XR-2011 datasheet.

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Full PDF Text Transcription

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XR-2011/12/13/14 High·Voltage, High·Current Darlington Transistor Arrays GENERAL DESCRIPTION The XR-2011/2012/2013/2014 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic substrate. All units feature open collector outputs and integral protection diodes for driving inductive loads. Peak inrush currents of up to 750 mA are allowed, which makes the arrays ideal for driving tungsten filament lamps. The outputs may be paralleled to achieve higher load current capability although each driver has a maximum continuous collector current rating of 600 mAo The arrays are directly price competitive with discrete transistor alternatives.
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