BZX55B47 Datasheet PDF

FEATURES

High reliability

APPLICATIONS

Voltage stabilization

ABSOLUTE MAXIMUM RATINGS

Tj=25℃ Parameter Power dissipation Z-current Junction temperature Storage temperature range Test Conditions I=4mm TL≤25℃ Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 -65~+175 Unit mW mA ℃ ℃ Maximum Thermal Resistance Tj=25℃ Parameter Test Conditions Symbol Value Unit Junction ambient I=4mm TL=constant RthJA 350 K/W Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability.

ELECTRICAL CHARACTERISTICS

Tj=25℃ Parameter Forward voltage Test Conditions IF=200mA Type Symbol Min Typ Max Unit VF 1.5 V FaxBack +86-512-66607370 Excel Semiconductor Rev. 3f, 1-Jun-2008 1/5 BZX55B Series Type BZX55B 2