Datasheet Details
| Part number | ES25P16 |
|---|---|
| Manufacturer | Excel Semiconductor |
| File Size | 495.85 KB |
| Description | 16Mbit CMOS 3.0 Volt Flash Memory |
| Datasheet | ES25P16_ExcelSemiconductor.pdf |
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Overview: E ES S II ADVANCED INFORMATION Excel Semiconductor inc. ES25P16 16Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface .. ARCHITECTURAL ADVANTAGES • Single power supply operation - 2.7V -3.6V for read and program operations • Memory Architecture - Thirty-two sectors with 512 Kb each • Program - Page program ( up to 256 bytes) in 1.5ms (typical) - Program cycles are on a page by page basis • Erase - 0.5s typical sector erase time - 12s typical bulk erase time • Endurance - 100,000 cycles per sector (typical) • Data Retention - 20 years (typical) • Parameter Page - 256 Byte page independent from main memory for parameter storage - Seperate from array, erase time < 20ms • Device ID - JEDEC standard two-byte electronic signature - RES instruction one-byte electronic signature for backward patibility - Manufacturer and device type ID • Process Technology - Manufactured on 0.
| Part number | ES25P16 |
|---|---|
| Manufacturer | Excel Semiconductor |
| File Size | 495.85 KB |
| Description | 16Mbit CMOS 3.0 Volt Flash Memory |
| Datasheet | ES25P16_ExcelSemiconductor.pdf |
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|
|
The ES25P16 device is a 3.0 volt (2.7V to 3.6V) single power flash memory device.
ES25P16 consists of thirty-two sectors, each with 512 Kb memory.
Data appears on SI input pin when inputting data into the memory and on the SO output pin when ..
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