Excel Semiconductor LL5711
Schottky Barrier Diode
| Part No. | LL5711 |
|---|---|
| Datasheet | LL5711 Download |
| Manufacturer |  Excel Semiconductor |
| Description | Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
1. For general purpose applications. 2. Metal-on-silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications.ABSOLUTE MAXIMUM RATINGS
(Tj=25℃) Parameter Peak inverse voltage Maximum single cycle surge 10us square wave Power dissipation Maximum junction temperature Storage temperature range Part Symbol Value Unit LL5711 VRRM 70 V LL6263 VRRM 60 V IFSM 2.0 A Ptot 400 mW Tj 125 ℃ TS -55~+150 ℃ELECTRICAL CHARACTERISTICS
(Tj=25 ℃) Parameter Symbol Test Conditions Part Min Typ Max Unit Reverse breakdown voltage V(BR)R IR=10μA (pulsed) LL5711 70 - - V LL6263 60 - - V Leakage current Forward voltage drop Junction capacitance IR VR=50V VF IF=1mA IF=15mA Ctot VR=0V, f=1MHz LL5711 LL6263 - - 200 nA - 0.41 V - 1.0 V - 2.0 pF - 2.2 pF Reverse recovery time trr IF= IR=5mA recover to 0.1 IR - - 1.0 ns Stresses exceeding maximum ratings may damage the device.
