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LL5711 / LL6263
Schottky Barrier Diode
Features
1. For general purpose applications. 2. Metal-on-silicon schottky barrier device which is
protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications.
Absolute Maximum Ratings (Tj=25℃)
Parameter Peak inverse voltage
Maximum single cycle surge 10us square wave Power dissipation Maximum junction temperature Storage temperature range
Part
Symbol
Value
Unit
LL5711
VRRM
70
V
LL6263
VRRM
60
V
IFSM
2.
LL6263 Datasheet
