EFC480C Datasheet | Excelics Semiconductor

.Data Sheet.co.kr Excelics PRELIMINARY DATA SHEET - - - - - - - +33.5d Bm TYPICAL OUTPUT POWER 18.0d B TYPICAL POWER GAIN AT 2GHz High BVgd FOR 10V BIAS 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 80m A PER BIN RANGE ' Low Distortion Ga As Power FET ' 6 - 6 - 6 ELECTRICAL CHARACTERISTICS (Ta = 25 C) SYMBOLS P1d B G1d B PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1d B pression Vds=8V, Ids=50% Idss Gain at 1d B pression Vds=8V, Ids=50% Idss Gain at 1d B pression Vds=8V, Ids=50% Idss Saturated Drain Current Transconductance Pinch-off Voltage f= 2GHz f= 4GHz f= 2GHz f= 4GHz f= 2GHz Chip Thickness: 75 ± 13 microns All Dimensions In Microns MIN 32.0 16.0 TYP 33.5 33.5 18.0 12.5 40 UNIT d Bm d B % Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=10m A 640 200 960 560 -2.5 1440 m A m...