EIA1819-1P
EIA1819-1P is 18.7-19.7GHz 1W Internally Matched Power FET manufactured by Excelics Semiconductor.
Excelics
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- - 18.7-19.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA Features
HIGH PAE( 25% TYPICAL) EIB Features
HIGH IP3(43dBm TYPICAL) +30.0/+29.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 6.5/5.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE
EIA/EIB1819-1P
Not remended for new designs. Contact factory. Effective 03/2003 18.7-19.7GHz, 1W Internally Matched Power FET
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
EIA1819-1P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB pression f=18.7-19.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Gain at 1dB pression f=18.7-19.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Power Added...
