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EIB1718-1P - 17.7-18.7GHz 1W Internally Matched Power FET

Key Features

  • HIGH PAE( 25%.

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Datasheet Details

Part number EIB1718-1P
Manufacturer Excelics Semiconductor
File Size 49.08 KB
Description 17.7-18.7GHz 1W Internally Matched Power FET
Datasheet download datasheet EIB1718-1P Datasheet

Full PDF Text Transcription for EIB1718-1P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for EIB1718-1P. For precise diagrams, and layout, please refer to the original PDF.

Excelics • • • • • • 17.7-18.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(43dBm TYPICAL) +30.0/+2...

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S HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(43dBm TYPICAL) +30.0/+29.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 6.5/5.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1718-1P Not recommended for new designs. Contact factory. Effective 03/2003 17.7-18.7GHz, 1W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1718-1P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=17.7-18.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Gain at 1dB Compression f=17.7-18.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Power Added Efficiency at 1dB compression f=17.7-18.

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