EIC7785-10 - Internally Matched Power FET

Excelics Semiconductor

Key Features

7.70.
8.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 28% Power Added Efficiency -46 dBc IM3 at PO = 29.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL.

EIC7785-10 internally matched power fet by Excelics Semiconductor - Datasheet Preview

Datasheet Details

Part number	EIC7785-10
Manufacturer	Excelics Semiconductor
File Size	111.83 KB
Description	Internally Matched Power FET
Datasheet	EIC7785-10 Datasheet

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www.DataSheet4U.com EIC7785-10 UPDATED 04/12/2006 7.70-8.50 GHz 10-Watt Internally Matched Power FET Excelics EIC7785-10 .827±.010 .669 .120 MIN FEATURES • • • • • • • • 7.70– 8.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 28% Power Added Efficiency -46 dBc IM3 at PO = 29.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 7.70-8.50GHz VDS = 10 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 7.70-8.