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EID1415A1-12 - 14.40-15.35 GHz 12-Watt Internally-Matched Power FET

General Description

The EID1415A1-12 is a high power, highly linear, single stage MFET amplifier in a flange mount package.

Key Features

  • 14.40-15.35 GHz Bandwidth.
  • Input/Output Impedance Matched to 50 Ohms.
  • +41.0 dBm Output Power at 1dB Compression.
  • 6.0 dB Power Gain at 1dB Compression.
  • 25% Power Added Efficiency.
  • Hermetic Metal Flange Package.
  • 100% Tested for DC, RF, and RTH.

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Datasheet Details

Part number EID1415A1-12
Manufacturer Excelics Semiconductor
File Size 188.57 KB
Description 14.40-15.35 GHz 12-Watt Internally-Matched Power FET
Datasheet download datasheet EID1415A1-12 Datasheet

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com EID1415A1-12 UPDATED 07/12/2007 14.40-15.35 GHz 12-Watt Internally-Matched Power FET FEATURES • 14.40-15.35 GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +41.0 dBm Output Power at 1dB Compression • 6.0 dB Power Gain at 1dB Compression • 25% Power Added Efficiency • Hermetic Metal Flange Package • 100% Tested for DC, RF, and RTH DESCRIPTION The EID1415A1-12 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This amplifier features Excelics’ unique PHEMT transistor technology. Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f = 14.40-15.