EFA720A Datasheet | Excelics

.. Excelics DATA SHEET - - - - - - +35.5d Bm TYPICAL OUTPUT POWER 17.5d B TYPICAL POWER GAIN AT 2GHz 0.5 X 7200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 120m A PER BIN RANGE ' Low Distortion Ga As Power FET ' ' 6 - 6 - 6 - 6 ELECTRICAL CHARACTERISTICS (Ta = 25 C) SYMBOLS P1d B G1d B PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1d B pression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Gain at 1d B pression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Power Added Efficiency at 1d B pression Vds=8V, Ids=50% Idss f= 2GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=20m A Chip Thickness: 50 ± 10 microns (with > 20 microns Gold Plated Heat Sink (PHS) ) All Dimensions In Microns MIN 33.5 16.0 TYP 35.5 35.5 17.5 12.5 36 UNIT d Bm d B % 1200 840 2040 1100 -2.0 2640 m A m S -3.5 V V V o Drain Breakdown Voltage Igd=7.2m A Source Breakdown Voltage Igs=7.2m A Thermal Resistance (Au-Sn Eutectic Attach) -12 -7 -15 -14 6 C/W MAXIMUM RATINGS AT 25 C SYMBOLS Vds...