C30659-1550-R2AH Datasheet PDF - Excelitas Si and InGaAs APD Preamplifier Specs

C30659-1550-R2AH - Si and InGaAs APD Preamplifier

This page provides the datasheet information for the C30659-1550-R2AH, a member of the C30659 Si and InGaAs APD Preamplifier family.

Datasheet Summary

Features

System bandwidths of 50 MHz and 200MHz.
Ultra low noise equivalent power (NEP).
Spectral response range:.
With Si APD: 400 to 1100 nm.
With InGaAs APD: 1100 to 1700 nm.
Typical power consumption: 150 mW.
±5 V amplifier operating voltages.
50 Ω AC load capability (AC-Coupled).
Hermetically-sealed TO-8 package.
High reliability.
Fast overload recovery.
Pin-to-pin compatible with the C30950 Series.
Light entry angle, over 130.

Datasheet Details

Part number	C30659-1550-R2AH
Manufacturer	Excelitas
File Size	765.86 KB
Description	Si and InGaAs APD Preamplifier
Datasheet	C30659-1550-R2AH Datasheet
Additional preview pages of the C30659-1550-R2AH datasheet.

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Full PDF Text Transcription

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DATASHEET Photon Detection C30659 Series – 900/1060/1550/1550E Si and InGaAs APD Preamplifier Modules Excelitas’ C30659-1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities. Excelitas Technologies’ C30659 Series includes a Si or InGaAs Avalanche Photodiode (APD) with a hybrid preamplifier, in the same hermetically-sealed TO-8 package, to allow for ultra-low noise operation. The Si APDs used in these devices are the same as used in Excelitas’ C30817EH, C30902EH, C30954EH and C30956EH products, while the InGaAs APDs are used in the C30645EH and C30662EH products. These detectors provide very good response between 830 and 1550 nm and very fast rise- and fall-times at all wavelengths.

Published: Oct 10, 2015 |