C30659-1550E-R2AH Datasheet | Excelitas

Photon Detection C30659 Series - 900/1060/1550/1550E Si and In Ga As APD Preamplifier Modules Excelitas’ C30659-1550E In Gas As APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities. Excelitas Technologies’ C30659 Series includes a Si or In Ga As Avalanche Photodiode (APD) with a hybrid preamplifier, in the same hermetically-sealed TO-8 package, to allow for ultra-low noise operation. The Si APDs used in these devices are the same as used in Excelitas’ C30817EH, C30902EH, C30954EH and C30956EH products, while the In Ga As APDs are used in the C30645EH and C30662EH products. These detectors provide very good response between 830 and 1550 nm and very fast rise- and fall-times at all wavelengths. The preamplifier section of the module uses a very low noise Ga As FET front end designed to operate at higher transimpedance than Excelitas’ regular C30950 Series. The C30659 is pin-to-pin patible with the C30950 Series with a negative output. An emitter follower is used as an output buffer stage. To obtain the wideband characteristics, the output of these devices should be capacitively- or AC-coupled to a 50 Ω termination. The module must not be DC-coupled to loads of less than 2,000 Ohms. For field use, it is remended that a temperature-pensated HV supply be employed to maintain a constant responsivity over temperature. Excelitas’ In Ga As C30659-1550E Preamplifier Modules, with 1550 nm peak response, are designed to exhibit higher damage thresholds, thus providing greater resilience when exposed to high optical power densities. Customization of the C30659 Series of APD Preamplifier Modules is available to meet your specific design challenges; modifications include bandwidth and gain optimization, use of different APDs, FC-connectorized packaging. .excelitas. C30659 Series-Rev.1.1-2013.06 Page 1 of 10 Key Features - System bandwidths of 50 MHz and 200MHz - Ultra low noise...